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STM32F103R4 参数 Datasheet PDF下载

STM32F103R4图片预览
型号: STM32F103R4
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ARM的低密度高性能线的32位MCU,具有16或32 KB闪存, USB , CAN ,6个定时器, 2的ADC ,6个通信接口 [Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 80 页 / 1067 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM32F103x4, STM32F103x6  
5.3.12  
I/O port characteristics  
General input/output characteristics  
Unless otherwise specified, the parameters given in Table 34 are derived from tests  
performed under the conditions summarized in Table 9. All I/Os are CMOS and TTL  
compliant.  
Table 34. I/O static characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VIL  
Input low level voltage  
–0.5  
0.8  
V
Standard IO input high level  
voltage  
TTL ports  
2
VDD+0.5  
VIH  
IO FT(1) input high level voltage  
2
5.5V  
VIL  
Input low level voltage  
–0.5  
0.35 VDD  
VDD+0.5  
CMOS ports  
V
VIH  
Input high level voltage  
0.65 VDD  
Standard IO Schmitt trigger  
voltage hysteresis(2)  
200  
mV  
mV  
Vhys  
IO FT Schmitt trigger voltage  
hysteresis(2)  
(3)  
5% VDD  
VSS VIN VDD  
Standard I/Os  
1  
3
Ilkg  
Input leakage current (4)  
µA  
VIN= 5 V  
I/O FT  
Weak pull-up equivalent  
resistor(5)  
RPU  
VIN VSS  
VIN VDD  
30  
30  
40  
50  
50  
k  
Weak pull-down equivalent  
resistor(5)  
RPD  
CIO  
40  
5
k  
I/O pin capacitance  
pF  
1. FT = Five-volt tolerant.  
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization, not tested in  
production.  
3. With a minimum of 100 mV.  
4. Leakage could be higher than max. if negative current is injected on adjacent pins.  
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable  
PMOS/NMOS. This MOS/NMOS contribution to the series resistance is minimum (~10% order).  
All I/Os are CMOS and TTL compliant (no software configuration required), their  
characteristics consider the most strict CMOS-technology or TTL parameters:  
For V :  
IH  
if V is in the [2.00 V - 3.08 V] range: CMOS characteristics but TTL included  
DD  
if V is in the [3.08 V - 3.60 V] range: TTL characteristics but CMOS included  
DD  
For V :  
IL  
if V is in the [2.00 V - 2.28 V] range: TTL characteristics but CMOS included  
DD  
if V is in the [2.28 V - 3.60 V] range: CMOS characteristics but TTL included  
DD  
52/80  
Doc ID 15060 Rev 3