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STM32F103C8T7XXX 参数 Datasheet PDF下载

STM32F103C8T7XXX图片预览
型号: STM32F103C8T7XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 中密度高性能线的基于ARM的32位MCU,具有64或128 KB的闪存, USB , CAN ,7个定时器, 2的ADC ,9个通信接口 [Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 92 页 / 1212 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
Table 9.
Symbol
STM32F103x8, STM32F103xB
General operating conditions (continued)
Parameter
Conditions
LFBGA100
LQFP100
Min
Max
454
434
308
mW
444
363
1110
–40
–40
–40
–40
–40
–40
85
°C
105
105
°C
125
105
°C
7 suffix version
125
Unit
P
D
Power dissipation at T
A
= 85 °C TFBGA64
for suffix 6 or T
A
= 105 °C for
LQFP64
suffix 7
(3)
LQFP48
VFQFPN36
Ambient temperature for 6
suffix version
Maximum power dissipation
Low power dissipation
(4)
Maximum power dissipation
Low power dissipation
6 suffix version
T
A
Ambient temperature for 7
suffix version
T
J
Junction temperature range
1. When the ADC is used, refer to
2. It is recommended to power V
DD
and V
DDA
from the same source. A maximum difference of 300 mV
between V
DD
and V
DDA
can be tolerated during power-up and operation.
3. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
J
max (see
4. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
J
max (see
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for T
A
.
Table 10.
Symbol
t
VDD
Operating conditions at power-up / power-down
Parameter
V
DD
rise time rate
V
DD
fall time rate
Conditions
Min
0
20
Max
Unit
µs/V
5.3.3
Embedded reset and power control block characteristics
The parameters given in
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
36/92
Doc ID 13587 Rev 11