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STM32F103C8T6XXX 参数 Datasheet PDF下载

STM32F103C8T6XXX图片预览
型号: STM32F103C8T6XXX
PDF下载: 下载PDF文件 查看货源
内容描述: 中密度高性能线的基于ARM的32位MCU,具有64或128 KB的闪存, USB , CAN ,7个定时器, 2的ADC ,9个通信接口 [Medium-density performance line ARM-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 communication interfaces]
分类和应用: 闪存微控制器和处理器外围集成电路通信时钟
文件页数/大小: 92 页 / 1212 K
品牌: STMICROELECTRONICS [ ST ]
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Revision history  
Table 58. Document revision history (continued)  
STM32F103x8, STM32F103xB  
Date  
Revision  
Changes  
Document status promoted from preliminary data to datasheet.  
The STM32F103xx is USB certified. Small text changes.  
Power supply schemes on page 13 modified. Number of  
communication peripherals corrected for STM32F103Tx and number of  
GPIOs corrected for LQFP package in Table 2: STM32F103xx medium-  
density device features and peripheral counts.  
Main function and default alternate function modified for PC14 and  
PC15 in, Note 6 added and Remap column added in Table 5: Medium-  
density STM32F103xx pin definitions.  
VDD–VSS ratings and Note 1 modified in Table 6: Voltage  
characteristics, Note 1 modified in Table 7: Current characteristics.  
Note 1 and Note 2 added in Table 11: Embedded reset and power  
control block characteristics.  
IDD value at 72 MHz with peripherals enabled modified in Table 14:  
Maximum current consumption in Run mode, code with data  
processing running from RAM.  
IDD value at 72 MHz with peripherals enabled modified in Table 15:  
Maximum current consumption in Sleep mode, code running from  
Flash or RAM on page 41.  
IDD_VBAT typical value at 2.4 V modified and IDD_VBAT maximum values  
added in Table 16: Typical and maximum current consumptions in Stop  
and Standby modes. Note added in Table 17 on page 45 and Table 18  
on page 46. ADC1 and ADC2 consumption and notes modified in  
Table 19: Peripheral current consumption.  
tSU(HSE) and tSU(LSE) conditions modified in Table 22 and Table 23,  
respectively.  
22-Nov-2007  
4
Maximum values removed from Table 26: Low-power mode wakeup  
timings. tRET conditions modified in Table 29: Flash memory endurance  
and data retention. Figure 12: Power supply scheme corrected.  
Figure 18: Typical current consumption in Stop mode with regulator in  
Low-power mode versus temperature at VDD = 3.3 V and 3.6 V added.  
Note removed below Figure 27: SPI timing diagram - slave mode and  
CPHA = 0. Note added below Figure 28: SPI timing diagram - slave  
mode and CPHA = 1(1).  
Details on unused pins removed from General input/output  
characteristics on page 57.  
Table 41: SPI characteristics updated. Table 42: USB startup time  
added. VAIN, tlat and latr modified, note added and Ilkg removed in  
t
Table 45: ADC characteristics. Test conditions modified and note added  
in Table 48: ADC accuracy. Note added below Table 46 and Table 49.  
Inch values corrected in Table 52: LQPF100, 14 x 14 mm 100-pin low-  
profile quad flat package mechanical data, Table 53: LQFP64, 10 x 10  
mm, 64-pin low-profile quad flat package mechanical data and  
Table 55: LQFP48, 7 x 7 mm, 48-pin low-profile quad flat package  
mechanical data.  
JAvalue for VFQFPN36 package added in Table 56: Package thermal  
characteristics  
Order codes replaced by Section 7: Ordering information scheme.  
MCU ‘s operating conditions modified in Typical current consumption  
on page 44. Avg_Slope and V25 modified in Table 49: TS  
characteristics. I2C interface characteristics on page 62 modified.  
Impedance size specified in A.4: Voltage glitch on ADC input 0 on  
page 81.  
88/92  
Doc ID 13587 Rev 11