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STM32F103RET6TR 参数 Datasheet PDF下载

STM32F103RET6TR图片预览
型号: STM32F103RET6TR
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度高性能线的基于ARM的32位MCU,具有256至512KB闪存, USB , CAN ,11个定时器, 3的ADC ,13个通信接口 [High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 123 页 / 1691 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F103xC, STM32F103xD, STM32F103xE  
Prequalification trials  
Electrical characteristics  
Most of the common failures (unexpected reset and program counter corruption) can be  
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1  
second.  
To complete these trials, ESD stress can be applied directly on the device, over the range of  
specification values. When unexpected behavior is detected, the software can be hardened  
to prevent unrecoverable errors occurring (see application note AN1015).  
Electromagnetic Interference (EMI)  
The electromagnetic field emitted by the device are monitored while a simple application is  
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with  
IEC 61967-2 standard which specifies the test board and the pin loading.  
Table 42. EMI characteristics  
Max vs. [fHSE/fHCLK  
]
Monitored  
Symbol Parameter  
Conditions  
Unit  
frequency band  
8/48 MHz 8/72 MHz  
0.1 to 30 MHz  
30 to 130 MHz  
130 MHz to 1GHz  
SAE EMI Level  
8
31  
28  
4
12  
21  
33  
4
VDD 3.3 V, TA 25 °C,  
LQFP144 package  
compliant with IEC  
61967-2  
dBµV  
-
SEMI  
Peak level  
5.3.12  
Absolute maximum ratings (electrical sensitivity)  
Based on three different tests (ESD, LU) using specific measurement methods, the device is  
stressed in order to determine its performance in terms of electrical sensitivity.  
Electrostatic discharge (ESD)  
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are  
applied to the pins of each sample according to each pin combination. The sample size  
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test  
conforms to the JESD22-A114/C101 standard.  
Table 43. ESD absolute maximum ratings  
Symbol  
Ratings  
Conditions  
Class Maximum value(1) Unit  
Electrostatic discharge  
TA +25 °C, conforming  
V
2
2000  
500  
ESD(HBM) voltage (human body model) to JESD22-A114  
V
Electrostatic discharge  
TA +25 °C, conforming  
V
II  
ESD(CDM) voltage (charge device model) to JESD22-C101  
1. Based on characterization results, not tested in production.  
Doc ID 14611 Rev 7  
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