Electrical characteristics
STM32F103xC, STM32F103xD, STM32F103xE
Table 9.
Thermal characteristics
Ratings
Symbol
Value
Unit
TSTG
TJ
Storage temperature range
–65 to +150
150
°C
°C
Maximum junction temperature
5.3
Operating conditions
5.3.1
General operating conditions
Table 10. General operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
fHCLK
fPCLK1
fPCLK2
VDD
Internal AHB clock frequency
Internal APB1 clock frequency
Internal APB2 clock frequency
Standard operating voltage
0
0
0
2
72
36
72
3.6
MHz
V
Analog operating voltage
(ADC not used)
2
3.6
3.6
Must be the same potential
as VDD
(1)
VDDA
V
V
(2)
Analog operating voltage
(ADC used)
2.4
1.8
VBAT
Backup operating voltage
3.6
666
434
444
500
500
85
LQFP144
LQFP100
LQFP64
Power dissipation at TA =
85 °C for suffix 6 or TA =
105 °C for suffix 7(3)
PD
mW
LFBGA100
LFBGA144
Maximum power dissipation –40
Low power dissipation(4)
–40
Maximum power dissipation –40
Ambient temperature for 6
suffix version
°C
°C
°C
105
105
125
105
125
TA
TJ
Ambient temperature for 7
suffix version
Low power dissipation(4)
–40
–40
–40
6 suffix version
Junction temperature range
7 suffix version
1. When the ADC is used, refer to Table 58: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 114).
4. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 114).
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