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STM32F103RCT7TR 参数 Datasheet PDF下载

STM32F103RCT7TR图片预览
型号: STM32F103RCT7TR
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度高性能线的基于ARM的32位MCU,具有256至512KB闪存, USB , CAN ,11个定时器, 3的ADC ,13个通信接口 [High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 123 页 / 1691 K
品牌: STMICROELECTRONICS [ ST ]
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Revision history  
Table 72. Document revision history  
STM32F103xC, STM32F103xD, STM32F103xE  
Changes  
Date  
Revision  
Figure 1: STM32F103xC, STM32F103xD and STM32F103xE  
performance line block diagram updated.  
Note 5 updated and Note 4 added in Table 5: High-density  
STM32F103xx pin definitions.  
VRERINT and TCoeff added to Table 13: Embedded internal reference  
voltage.  
Table 16: Maximum current consumption in Sleep mode, code running  
from Flash or RAM modified.  
fHSE_ext min modified in Table 21: High-speed external user clock  
characteristics.  
CL1 and CL2 replaced by C in Table 23: HSE 4-16 MHz oscillator  
characteristics and Table 24: LSE oscillator characteristics (fLSE =  
32.768 kHz), notes modified and moved below the tables.  
Note 1 modified below Figure 22: Typical application with an 8 MHz  
crystal. Table 25: HSI oscillator characteristics modified. Conditions  
removed from Table 27: Low-power mode wakeup timings.  
Jitter added to Table 28: PLL characteristics.  
Figure 43: Recommended NRST pin protection modified.  
In Table 31: Asynchronous non-multiplexed SRAM/PSRAM/NOR read  
timings: th(BL_NOE) and th(A_NOE) modified.  
21-Jul-2009  
6
In Table 32: Asynchronous non-multiplexed SRAM/PSRAM/NOR write  
timings: th(A_NWE) and th(Data_NWE) modified.  
In Table 33: Asynchronous multiplexed PSRAM/NOR read timings:  
th(AD_NADV) and th(A_NOE) modified.  
In Table 34: Asynchronous multiplexed PSRAM/NOR write timings:  
th(A_NWE) modified.  
In Table 35: Synchronous multiplexed NOR/PSRAM read timings:  
th(CLKH-NWAITV) modified.  
In Table 40: Switching characteristics for NAND Flash read and write  
cycles: th(NOE-D) modified.  
Table 52: SPI characteristics modified. Values added to Table 53: I2S  
characteristics and Table 54: SD / MMC characteristics.  
CADC and RAIN parameters modified in Table 58: ADC characteristics.  
RAIN max values modified in Table 59: RAIN max for fADC = 14 MHz.  
Table 62: DAC characteristics modified. Figure 57: 12-bit buffered /non-  
buffered DAC added.  
Figure 60: LFBGA100 - 10 x 10 mm low profile fine pitch ball grid array  
package outline and Table 65: LFBGA100 - 10 x 10 mm low profile fine  
pitch ball grid array package mechanical data updated.  
Number of DACs corrected in Table 3: STM32F103xx family.  
IDD_VBAT updated in Table 17: Typical and maximum current  
consumptions in Stop and Standby modes.  
Figure 16: Typical current consumption on VBAT with RTC on vs.  
temperature at different VBAT values added.  
24-Sep-2009  
7
IEC 1000 standard updated to IEC 61000 and SAE J1752/3 updated to  
IEC 61967-2 in Section 5.3.11: EMC characteristics on page 80.  
Table 62: DAC characteristics modified. Small text changes.  
122/123  
Doc ID 14611 Rev 7