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STM32F103RCT7TR 参数 Datasheet PDF下载

STM32F103RCT7TR图片预览
型号: STM32F103RCT7TR
PDF下载: 下载PDF文件 查看货源
内容描述: 高密度高性能线的基于ARM的32位MCU,具有256至512KB闪存, USB , CAN ,11个定时器, 3的ADC ,13个通信接口 [High-density performance line ARM-based 32-bit MCU with 256 to 512KB Flash, USB, CAN, 11 timers, 3 ADCs, 13 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 123 页 / 1691 K
品牌: STMICROELECTRONICS [ ST ]
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STM32F103xC, STM32F103xD, STM32F103xE  
Table 72. Document revision history  
Revision history  
Date  
Revision  
Changes  
I/O information clarified on page 1. Figure 4: STM32F103xC and  
STM32F103xE performance line BGA100 ballout corrected.  
I/O information clarified on page 1.  
In Table 5: High-density STM32F103xx pin definitions:  
– I/O level of pins PF11, PF12, PF13, PF14, PF15, G0, G1 and G15  
updated  
– PB4, PB13, PB14, PB15, PB3/TRACESWO moved from Default  
column to Remap column  
PG14 pin description modified in Table 6: FSMC pin definition.  
Figure 9: Memory map on page 38 modified.  
Note modified in Table 14: Maximum current consumption in Run mode,  
code with data processing running from Flash and Table 16: Maximum  
current consumption in Sleep mode, code running from Flash or RAM.  
Figure 17, Figure 18 and Figure 19 show typical curves (titles  
changed).  
Table 21: High-speed external user clock characteristics and Table 22:  
Low-speed external user clock characteristics modified. ACCHSI max  
values modified in Table 25: HSI oscillator characteristics.  
FSMC configuration modified for Asynchronous waveforms and timings.  
Notes modified below Figure 24: Asynchronous non-multiplexed  
SRAM/PSRAM/NOR read waveforms and Figure 25: Asynchronous  
non-multiplexed SRAM/PSRAM/NOR write waveforms.  
tw(NADV) values modified in Table 31: Asynchronous non-multiplexed  
SRAM/PSRAM/NOR read timings and Table 34: Asynchronous  
multiplexed PSRAM/NOR write timings. th(Data_NWE) modified in  
Table 32: Asynchronous non-multiplexed SRAM/PSRAM/NOR write  
timings  
30-Mar-2009  
5
In Table 36: Synchronous multiplexed PSRAM write timings and  
Table 38: Synchronous non-multiplexed PSRAM write timings:  
– tv(Data-CLK) renamed as td(CLKL-Data)  
– td(CLKL-Data) min value removed and max value added  
– th(CLKL-DV) / th(CLKL-ADV) removed  
Figure 28: Synchronous multiplexed NOR/PSRAM read timings,  
Figure 29: Synchronous multiplexed PSRAM write timings and  
Figure 31: Synchronous non-multiplexed PSRAM write timings  
modified.  
Figure 48: I2S slave timing diagram (Philips protocol)(1) and Figure 49:  
I2S master timing diagram (Philips protocol)(1) modified.  
WLCSP64 package added (see Figure 8: STM32F103xC and  
STM32F103xE performance line WLCSP64 ballout, ball side, Table 5:  
High-density STM32F103xx pin definitions, Figure 61: WLCSP, 64-ball  
4.466 × 4.395 mm, 0.500 mm pitch, wafer-level chip-scale package  
outline and Table 66: WLCSP, 64-ball 4.466 × 4.395 mm, 0.500 mm  
pitch, wafer-level chip-scale package mechanical data).  
Small text changes.  
Doc ID 14611 Rev 7  
121/123