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STM32F103R4T6AXXX 参数 Datasheet PDF下载

STM32F103R4T6AXXX图片预览
型号: STM32F103R4T6AXXX
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ARM的低密度高性能线的32位MCU,具有16或32 KB闪存, USB , CAN ,6个定时器, 2的ADC ,6个通信接口 [Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 80 页 / 1067 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STM32F103x4, STM32F103x6
Table 9.
Symbol
Electrical characteristics
General operating conditions (continued)
Parameter
Conditions
TFBGA64
Min
Max
308
444
mW
363
1110
–40
–40
–40
–40
–40
–40
85
°C
105
105
°C
125
105
°C
7 suffix version
125
Unit
P
D
Power dissipation at T
A
= 85 °C LQFP64
for suffix 6 or T
A
= 105 °C for
LQFP48
suffix 7
(3)
VFQFPN36
Ambient temperature for 6
suffix version
Maximum power dissipation
Low power dissipation
(4)
Maximum power dissipation
Low power dissipation
(4)
6 suffix version
T
A
Ambient temperature for 7
suffix version
T
J
Junction temperature range
1. When the ADC is used, refer to
Table 45: ADC characteristics.
2. It is recommended to power V
DD
and V
DDA
from the same source. A maximum difference of 300 mV
between V
DD
and V
DDA
can be tolerated during power-up and operation.
3. If T
A
is lower, higher P
D
values are allowed as long as T
J
does not exceed T
J
max (see
Table 6.2: Thermal
4. In low power dissipation state, T
A
can be extended to this range as long as T
J
does not exceed T
J
max (see
5.3.2
Operating conditions at power-up / power-down
Subject to general operating conditions for T
A
.
Table 10.
Symbol
t
VDD
Operating conditions at power-up / power-down
Parameter
V
DD
rise time rate
V
DD
fall time rate
Conditions
Min
0
20
Max
Unit
µs/V
5.3.3
Embedded reset and power control block characteristics
The parameters given in
Table 11
are derived from tests performed under ambient
temperature and V
DD
supply voltage conditions summarized in
Table 9.
Doc ID 15060 Rev 3
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