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STM32F103R4T6AXXX 参数 Datasheet PDF下载

STM32F103R4T6AXXX图片预览
型号: STM32F103R4T6AXXX
PDF下载: 下载PDF文件 查看货源
内容描述: 基于ARM的低密度高性能线的32位MCU,具有16或32 KB闪存, USB , CAN ,6个定时器, 2的ADC ,6个通信接口 [Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces]
分类和应用: 闪存通信
文件页数/大小: 80 页 / 1067 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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STM32F103x4, STM32F103x6
Electrical characteristics
5.1.7
Current consumption measurement
Figure 11. Current consumption measurement scheme
IDD_VBAT
VBAT
IDD
VDD
VDDA
ai14126
5.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in
Table 6: Voltage characteristics,
Table 7: Current characteristics,
and
Table 8: Thermal characteristics
may cause permanent
damage to the device. These are stress ratings only and functional operation of the device
at these conditions is not implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Table 6.
Symbol
V
DD
–V
SS
V
IN
|V
DDx
|
|V
SSX
V
SS
|
V
ESD(HBM)
Voltage characteristics
Ratings
External main supply voltage (including V
DDA
and V
DD
)
(1)
Input voltage on five volt tolerant pin
(2)
Input voltage on any other pin
(2)
Variations between different V
DD
power pins
Variations between all the different ground pins
Electrostatic discharge voltage (human body
model)
Min
–0.3
V
SS
0.3
V
SS
0.3
Max
4.0
+5.5
V
DD
+0.3
50
mV
50
see
Section 5.3.11:
Absolute maximum ratings
(electrical sensitivity)
V
Unit
1. All main power (V
DD
, V
DDA
) and ground (V
SS
, V
SSA
) pins must always be connected to the external power
supply, in the permitted range.
2. I
INJ(PIN)
must never be exceeded (see
Table 7: Current characteristics).
This is implicitly insured if V
IN
maximum is respected. If V
IN
maximum cannot be respected, the injection current must be limited
externally to the I
INJ(PIN)
value. A positive injection is induced by V
IN
> V
IN
max while a negative injection is
induced by V
IN
< V
SS
.
Doc ID 15060 Rev 3
29/80