Electrical characteristics
Table 30.
Symbol
STM32F103x4, STM32F103x6
EMS characteristics
Parameter
Conditions
Level/
Class
2B
V
FESD
V
DD
�½3.3
V, T
A
�½+25
°C,
Voltage limits to be applied on any I/O pin to
f
HCLK
�½
72 MHz
induce a functional disturbance
conforms to IEC 61000-4-2
Fast transient voltage burst limits to be
applied through 100 pF on V
DD
and V
SS
pins to induce a functional disturbance
V
DD
�½3.3
V, T
A
�½+25
°C,
f
HCLK
�½72
MHz
conforms to IEC 61000-4-4
V
EFTB
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
●
●
●
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 31.
Symbol
EMI characteristics
Parameter
Conditions
Monitored
frequency band
0.1 to 30 MHz
Max vs. [f
HSE
/f
HCLK
]
Unit
8/48 MHz 8/72 MHz
12
22
23
4
12
19
29
4
-
dBµV
S
EMI
Peak level
V
DD
�½3.3
V, T
A
�½25
°C
30 to 130 MHz
130 MHz to 1GHz
SAE EMI Level
50/80
Doc ID 15060 Rev 3
STMICROELECTRONICS [ STMICROELECTRONICS ]
