STM32F103x8, STM32F103xB
Table 28.
Symbol
Electrical characteristics
Flash memory characteristics (continued)
Parameter
Conditions
Read mode
f
HCLK
= 72 MHz with 2 wait
states, V
DD
= 3.3 V
Min
(1)
Typ
Max
(1)
20
Unit
mA
I
DD
Supply current
Write / Erase modes
f
HCLK
= 72 MHz, V
DD
= 3.3 V
Power-down mode / Halt,
V
DD
= 3.0 to 3.6 V
5
50
2
3.6
mA
µA
V
V
prog
Programming voltage
1. Guaranteed by design, not tested in production.
Table 29.
Symbol
Flash memory endurance and data retention
Value
Parameter
Conditions
Min
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
1 kcycle
(2)
at T
A
= 85 °C
1 kcycle
(2)
at T
A
= 105 °C
10 kcycles
(2)
at T
A
= 55 °C
(1)
Unit
Typ
Max
kcycles
N
END
Endurance
10
30
10
20
t
RET
Data retention
Years
1. Based on characterization, not tested in production.
2. Cycling performed over the whole temperature range.
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
●
●
Electrostatic discharge (ESD)
(positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB:
A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
They are based on the EMS levels and classes
defined in application note AN1709.
Doc ID 13587 Rev 12
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