Electrical characteristics
STM32F103x8, STM32F103xB
5.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 32. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value(1) Unit
TA = +25 °C
conforming to
JESD22-A114
Electrostatic discharge
voltage (human body model)
VESD(HBM)
2
2000
500
V
Electrostatic discharge
VESD(CDM) voltage (charge device
model)
TA = +25 °C
conforming to
JESD22-C101
II
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
●
A supply overvoltage is applied to each power supply pin
●
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 33. Electrical sensitivities
Symbol
Parameter
Conditions
Class
II level A
LU
Static latch-up class
TA = +105 °C conforming to JESD78A
60/105
Doc ID 13587 Rev 15
STMICROELECTRONICS [ ST ]
