STM32F103x8, STM32F103xB
Electrical characteristics
Table 9.
Symbol
General operating conditions (continued)
Parameter Conditions
Min
Max
Unit
VDD
0.3
+
Standard IO
–0.3
2 V < VDD ≤ 3.6 V –0.3
5.5
5.2
VIN
I/O input voltage
V
FT IO(3)
BOOT0
VDD = 2 V
–0.3
0
5.5
LFBGA100
454
434
339
308
444
363
624
1000
85
LQFP100
UFBGA100
Power dissipation at TA = 85 °C
for suffix 6 or TA = 105 °C for
suffix 7(4)
TFBGA64
PD
mW
LQFP64
LQFP48
UFQFPN48
VFQFPN36
Maximum power dissipation
Low power dissipation(5)
Maximum power dissipation
Low power dissipation(5)
6 suffix version
7 suffix version
–40
–40
–40
–40
–40
–40
Ambient temperature for 6
suffix version
105
105
125
105
125
TA
TJ
Ambient temperature for 7
suffix version
°C
Junction temperature range
1. When the ADC is used, refer to Table 46: ADC characteristics.
2. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV
between VDD and VDDA can be tolerated during power-up and operation.
3. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled.
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal
characteristics on page 93).
5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see
Table 6.2: Thermal characteristics on page 93).
5.3.2
5.3.3
Operating conditions at power-up / power-down
Subject to general operating conditions for T .
A
Table 10. Operating conditions at power-up / power-down
Symbol
Parameter
Conditions
Min
Max
Unit
VDD rise time rate
VDD fall time rate
0
∞
∞
tVDD
µs/V
20
Embedded reset and power control block characteristics
The parameters given in Table 11 are derived from tests performed under ambient
temperature and V supply voltage conditions summarized in Table 9.
DD
Doc ID 13587 Rev 15
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STMICROELECTRONICS [ ST ]
