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STM32F103RET6 参数 Datasheet PDF下载

STM32F103RET6图片预览
型号: STM32F103RET6
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存256到512千字节 [256 to 512 Kbytes of Flash memory]
分类和应用: 闪存微控制器和处理器外围集成电路PC时钟
文件页数/大小: 130 页 / 1933 K
品牌: STMICROELECTRONICS [ ST ]
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Electrical characteristics  
STM32F103xC, STM32F103xD, STM32F103xE  
Figure 58. Typical connection diagram using the ADC  
V
DD  
STM32F103xx  
Sample and hold ADC  
converter  
V
0.6 V  
T
(1)  
(1)  
AIN  
R
R
ADC  
AINx  
12-bit  
converter  
I
1 µA  
L
C
V
T
parasitic  
V
AIN  
0.6 V  
(1)  
C
ADC  
ai14150c  
1. Refer to Table 59 for the values of RAIN, RADC and CADC  
.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the  
pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy  
this, fADC should be reduced.  
General PCB design guidelines  
Power supply decoupling should be performed as shown in Figure 59 or Figure 60,  
depending on whether V  
is connected to V  
or not. The 10 nF capacitors should be  
REF+  
DDA  
ceramic (good quality). They should be placed them as close as possible to the chip.  
Figure 59. Power supply and reference decoupling (V not connected to V  
)
DDA  
REF+  
STM32F103xx  
V
REF+  
(see note 1)  
1 µF // 10 nF  
V
DDA  
SSA  
1 µF // 10 nF  
V
/V  
REF–  
(see note 1)  
ai14388b  
1. VREF+ and VREF– inputs are available only on 100-pin packages.  
106/130  
Doc ID 14611 Rev 8