STM32F103xx
Electrical characteristics
5.3.7
Internal clock source characteristics
The parameters given in Table 19 are derived from tests performed under ambient
temperature and V supply voltage conditions summarized in Table 7.
DD
High-speed internal (HSI) RC oscillator
(1)(2)
Table 19. HSI oscillator characteristics
Symbol
Parameter
Frequency
Conditions
Min
Typ
Max(3)
Unit
fHSI
8
MHz
%
TA = –40 to 105 °C
at TA = 25°C
TBD
TBD
1
±3
±1
TBD
TBD
2
ACCHSI Accuracy of HSI oscillator
tsu(HSI) HSI oscillator start up time
%
µs
HSI oscillator power
IDD(HSI)
80
100
µA
consumption
1.
VDD = 3.3 V, TA = −40 to 105 °C unless otherwise specified.
2. TBD stands for to be determined.
3. Values based on device characterization, not tested in production.
LSI Low Speed Internal RC Oscillator
(1)
Table 20. LSI oscillator characteristics
Max(2)
Symbol
Parameter
Frequency
Conditions
Min
Typ
Unit
fLSI
30
60
85
kHz
µs
tsu(LSI) LSI oscillator start up time
LSI oscillator power
IDD(LSI)
0.65
1.2
µA
consumption
1.
VDD = 3 V, TA = −40 to 105 °C unless otherwise specified.
2. Value based on device characterization, not tested in production.
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STMICROELECTRONICS [ ST ]
