STM32F103xx
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T = −40 to 105 °C unless otherwise specified.
A
Table 23. Flash memory characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1) Unit
tprog
tERASE
tME
Word programming time
Page (1kB) erase time
Mass erase time
TA = −40 to +105 °C
TA = −40 to +105 °C
TA = −40 to +105 °C
Read mode
20
20
20
40
40
40
µs
ms
ms
f
HCLK = 72 MHz with
20
mA
2 wait states,
VDD = 3.3 V
Write / Erase modes
fHCLK = 72 MHz,
IDD
Supply current
5
mA
µA
VDD = 3.3 V
Power-down mode /
HALT,
50
VDD = 3.0 to 3.6 V
1. Values based on characterization and not tested in production.
Table 24. Flash memory endurance and data retention
Value
Symbol
Parameter
Conditions
Unit
Min(1)
Typ
Max
NEND Endurance
tRET Data retention
10
kcycles
Years
1
TA = 85 °C
30
1. Values based on characterization not tested in production.
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