STM32F103xx
Electrical characteristics
5.3.9
Memory characteristics
Flash memory
The characteristics are given at T
A
=
−
to 105 °C unless otherwise specified.
40
Table 23.
Symbol
t
prog
t
ERASE
t
ME
Flash memory characteristics
Parameter
Word programming time
Page (1kB) erase time
Mass erase time
Conditions
T
A
= −
to +105 °C
40
T
A
= −
to +105 °C
40
T
A
= −
to +105 °C
40
Read mode
f
HCLK
= 72 MHz with
2 wait states,
V
DD
= 3.3 V
Min
20
20
20
Typ
Max
(1)
40
40
40
Unit
µs
ms
ms
20
mA
I
DD
Supply current
Write / Erase modes
f
HCLK
= 72 MHz,
V
DD
= 3.3 V
Power-down mode /
HALT,
V
DD
= 3.0 to 3.6 V
5
mA
50
µA
1. Values based on characterization and not tested in production.
Table 24.
Symbol
N
END
t
RET
Flash memory endurance and data retention
Value
Parameter
Endurance
Data retention
T
A
= 85 °C
Conditions
Min
1
30
(1)
Unit
Typ
10
Max
kcycles
Years
1. Values based on characterization not tested in production.
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