STD25NE03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
3.33
100
1.5
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
275
(Tcase = 25 oC unless otherwisespecified)
ELECTRICAL CHARACTERISTICS
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250
A
VGS = 0
30
V
µ
IDSS
IGSS
VDS = Max Rating
1
10
A
µ
µA
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate Threshold Voltage VDS = VGS ID = 250 µA
1
1.6
2.5
V
RDS(on)
Static Drain-source On VGS = 10V ID = 12.5 A
0.019 0.025
0.030
Ω
Ω
Resistance
VGS = 5V
ID = 12.5 A
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
20
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max ID = 12.5 A
10
16
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1270
350
115
pF
pF
pF
2/9
STMICROELECTRONICS [ ST ]
