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ST92F150JDV1Q6 参数 Datasheet PDF下载

ST92F150JDV1Q6图片预览
型号: ST92F150JDV1Q6
PDF下载: 下载PDF文件 查看货源
内容描述: 8月16日- BIT单电压闪存单片机系列内存, E3 TMEMULATED EEPROM , CAN 2.0B和J1850 BLPD [8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TMEMULATED EEPROM, CAN 2.0B AND J1850 BLPD]
分类和应用: 闪存微控制器和处理器外围集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文件页数/大小: 426 页 / 3830 K
品牌: STMICROELECTRONICS [ ST ]
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ST92F124/F150/F250 - DEVICE ARCHITECTURE  
2.4 MEMORY ORGANIZATION  
Code and data are accessed within the same line-  
ar address space. All of the physically separate  
memory areas, including the internal ROM, inter-  
nal RAM and external memory are mapped in a  
common address space.  
The mapping of the various memory areas (inter-  
nal RAM or ROM, external memory) differs from  
device to device. Each 64-Kbyte physical memory  
segment is mapped either internally or externally;  
if the memory is internal and smaller than 64  
Kbytes, the remaining locations in the 64-Kbyte  
segment are not used (reserved).  
The ST9 provides a total addressable memory  
space of 4 Mbytes. This address space is ar-  
ranged as 64 segments of 64 Kbytes; each seg-  
ment is again subdivided into four 16 Kbyte pages.  
Refer to the Register and Memory Map Chapter  
for more details on the memory map.  
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