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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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ST10F276E  
Electrical characteristics  
Table 105. Demultiplexed bus (continued)  
fCPU = 40 MHz  
TCL = 12.5ns  
Variable CPU clock  
1/2 TCL = 1 to 64 MHz  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
ALE falling edge to Latched  
CS  
- 4 - tA  
6 - tA  
- 4 - tA  
6 - tA  
t38 CC  
t39 SR  
t41 CC  
ns  
ns  
ns  
Latched CS low to Valid  
Data In  
16.5 + tC + 2tA  
3TCL - 21+ tC + 2tA  
-
-
Latched CS hold after RD,  
WR  
2 + tF  
TCL - 10.5 + tF  
-
-
Address setup to RdCS,  
t82 CC WrCS  
(with RW-delay)  
14 + 2tA  
2 + 2tA  
2TCL - 11 + 2tA  
TCL -10.5 + 2tA  
-
-
-
-
ns  
ns  
Address setup to RdCS,  
t83 CC WrCS  
(no RW-delay)  
RdCS to Valid Data In  
(with RW-delay)  
4 + tC  
2TCL - 21 + tC  
t46 SR  
t47 SR  
t48 CC  
t49 CC  
-
-
ns  
ns  
ns  
ns  
RdCS to Valid Data In  
(no RW-delay)  
16.5 + tC  
3TCL - 21 + tC  
-
-
RdCS, WrCS low time  
(with RW-delay)  
15.5 + tC  
28 + tC  
2TCL - 9.5 + tC  
3TCL - 9.5 + tC  
-
-
-
-
RdCS, WrCS low time  
(no RW-delay)  
10 + tC  
0
2TCL - 15 + tC  
0
t50 CC Data valid to WrCS  
t51 SR Data hold after RdCS  
-
-
-
-
ns  
ns  
Data float after RdCS  
t53 SR  
16.5 + tF  
4 + tF  
2TCL - 8.5 + tF  
TCL - 8.5 + tF  
-
-
-
-
ns  
ns  
(with RW-delay)  
Data float after RdCS  
t68 SR  
(no RW-delay)  
Address hold after  
t55 CC  
- 8.5 + tF  
2 + tF  
- 8.5 + tF  
-
-
-
-
ns  
ns  
RdCS, WrCS  
TCL - 10.5 + tF  
t57 CC Data hold after WrCS  
1. RW-delay and tA refer to the next following bus cycle.  
2. Read data is latched with the same clock edge that triggers the address change and the rising RD edge.  
Therefore address changes which occur before the end of RD have no impact on read cycles.  
1
Partially tested, guaranteed by design characterization.  
Figures 61 to 64 present the different configurations of external memory cycle for a  
demultiplexed bus.  
Doc ID 12303 Rev 3  
215/235  
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