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ST10F276S-4T3 参数 Datasheet PDF下载

ST10F276S-4T3图片预览
型号: ST10F276S-4T3
PDF下载: 下载PDF文件 查看货源
内容描述: 16位MCU与MAC单元832 KB的闪存和68 KB的RAM [16-bit MCU with MAC unit 832 Kbyte Flash memory and 68 Kbyte RAM]
分类和应用: 闪存
文件页数/大小: 235 页 / 2491 K
品牌: STMICROELECTRONICS [ ST ]
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ST10F276E  
System reset  
Figure 36. SW / WDT bidirectional RESET (EA = 0) followed by a HW RESET  
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19.7  
Reset circuitry  
Internal reset circuitry is described in Figure 39. The RSTIN pin provides an internal pull-up  
resistor of 50kΩ to 250kΩ (The minimum reset time must be calculated using the lowest  
value).  
It also provides a programmable (BDRSTEN bit of SYSCON register) pull-down to output  
internal reset state signal (synchronous reset, watchdog timer reset or software reset).  
This bidirectional reset function is useful in applications where external devices require a  
reset signal but cannot be connected to RSTOUT pin.  
This is the case of an external memory running codes before EINIT (end of initialization)  
instruction is executed. RSTOUT pin is pulled high only when EINIT is executed.  
The RPD pin provides an internal weak pull-down resistor which discharges external  
capacitor at a typical rate of 200μA. If bit PWDCFG of SYSCON register is set, an internal  
pull-up resistor is activated at the end of the reset sequence. This pull-up will charge any  
capacitor connected on RPD pin.  
The simplest way to reset the ST10F276E is to insert a capacitor C1 between RSTIN pin  
and VSS, and a capacitor between RPD pin and VSS (C0) with a pull-up resistor R0 between  
RPD pin and VDD. The input RSTIN provides an internal pull-up device equalling a resistor of  
50kΩ to 250kΩ (the minimum reset time must be determined by the lowest value). Select C1  
that produce a sufficient discharge time to permit the internal or external oscillator and / or  
internal PLL and the on-chip voltage regulator to stabilize.  
Doc ID 12303 Rev 3  
123/235  
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