PD55008L-E
RF POWER transistor, LDMOST plastic family
N-Channel enhancement-mode lateral MOSFETs
General features
■ Excellent thermal stability
■ Common source configuration
■ P = 8W with 17dB gain @ 500MHz / 12.5V
OUT
■ Integrated ESD protection
■ New leadless plastic package
■ Supplied in tape and reel of 3K units
■ In compliance with 2002/95/EC european
PowerFLAT™(5x5)
directive
Description
The PD55008L-E is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12V in common source mode at
frequencies up to 1GHz.
Pin connection
PD55008L-E boasts the excellent gain, linearity
and reliability of STH1LV latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™. PD55008L-
E’s superior linearity performance makes it an
ideal solution for car mobile radio.
Order codes
Part number
Marking
Package
Packaging
PD55008L-E
55008
PowerFLAT™(5x5)
Tape and reel
January 2007
Rev 2
1/15
www.st.com
15
STMICROELECTRONICS [ ST ]
