Revision history
M25P40
13
Revision history
Table 25. Document revision history
Date
Revision
Changes
12-Apr-2001
25-May-2001
1.0
1.1
Document written.
Serial Paged Flash Memory renamed as Serial Flash Memory.
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;
Protection modes; Release from Power-down and Read Electronic
Signature (RES); Power-up.
Repositioning of several tables and illustrations without changing their
contents.
11-Sep-2001
1.2
Power-up timing illustration; SO8W package removed.
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL.
FAST_READ instruction added. Document revised with new timings, VWI
,
ICC3 and clock slew rate. Descriptions of Polling, Hold Condition, Page
Programming, Release for Deep Power-down made more precise. Value
of tW(max) modified.
16-Jan-2002
12-Sep-2002
1.3
1.4
Clarification of descriptions of entering Standby Power mode from Deep
Power-down mode, and of terminating an instruction sequence or data-
out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary
Data.
Typical Page Program time improved. Deep Power-down current
changed. Write Protect setup and hold times specified, for applications
that switch Write Protect to exit the Hardware Protection mode
immediately before a WRSR, and to enter the Hardware Protection mode
again immediately after.
13-Dec-2002
12-Jun-2003
24-Nov-2003
1.5
1.6
2.0
Document promoted from Preliminary Data to full Datasheet.
Table of contents, warning about exposed paddle on MLP8, and Pb-free
options added.
40 MHz AC Characteristics table included as well as 25 MHz. ICC3(max),
tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8
package.
Automotive range added. Soldering temperature information clarified for
RoHS compliant devices.
12-Mar-2004
05-Aug-2004
3.0
4.0
Device grade information clarified. Data-retention measurement
temperature corrected. Details of how to find the date of marking added.
Small text changes. Notes 2 and 3 removed from Table 24: Ordering
information scheme.
03-Jan-2005
01-Aug-2005
5.0
6.0
End timing line of tSHQZ modified in Figure 25: Output timing.
Updated Page Program (PP) instructions in Page Programming, Page
Program (PP), Instruction times (device grade 6) and Instruction times
(device grade 3).
50/53
STMICROELECTRONICS [ ST ]
