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M25P16-VMW6TG 参数 Datasheet PDF下载

M25P16-VMW6TG图片预览
型号: M25P16-VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,低电压,串行闪存,具有50 MHz SPI总线接口 [16 Mbit, low voltage, Serial Flash memory with 50 MHz SPI bus interface]
分类和应用: 闪存存储
文件页数/大小: 55 页 / 488 K
品牌: STMICROELECTRONICS [ ST ]
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M25P16  
Initial delivery state  
8
Initial delivery state  
The device is delivered with the memory array erased: all bits are set to 1 (each byte  
contains FFh). The Status Register contains 00h (all Status Register bits are 0).  
9
Maximum rating  
Stressing the device above the rating listed in the Absolute Maximum Ratings" table may  
cause permanent damage to the device. These are stress ratings only and operation of the  
device at these or any other conditions above those indicated in the Operating sections of  
this specification is not implied. Exposure to Absolute Maximum Rating conditions for  
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE  
Program and other relevant quality documents.  
Table 9.  
Symbol  
Absolute maximum ratings  
Parameter  
Min.  
Max.  
Unit  
TSTG  
TLEAD  
VIO  
Storage Temperature  
–65  
150  
see (1)  
VCC + 0.6  
4.0  
°C  
°C  
V
Lead temperature during soldering  
Input and Output Voltage (with respect to Ground)  
Supply Voltage  
–0.6  
–0.6  
VCC  
V
VESD  
Electrostatic Discharge Voltage (Human Body model)(2)  
–2000  
2000  
V
1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®  
7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS)  
2002/95/EU.  
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 , R2=500 ).  
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