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LM358N 参数 Datasheet PDF下载

LM358N图片预览
型号: LM358N
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗双运算放大器 [Low power dual operational amplifiers]
分类和应用: 运算放大器光电二极管PC
文件页数/大小: 19 页 / 323 K
品牌: STMICROELECTRONICS [ STMICROELECTRONICS ]
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Electrical characteristics
Table 3.
Symbol
LM158-LM258-LM358
Electrical characteristics for V
CC+
= +5V, V
CC-
= Ground, V
o
= 1.4V, T
amb
= +25°C
(unless otherwise specified)
Parameter
Common mode rejection ratio
R
s
10 kΩ
T
min
T
amb
T
max
Output current source
V
CC+
= +15 V, V
o
= +2 V, V
id
= +1 V
Output sink current
V
CC+
= +15V, V
o
= +2V, V
id
= -1V
V
CC+
= +15V, V
o
= +0.2V, V
id
= -1V
High level output voltage
R
L
= 2 kΩ, V
CC+
= 30 V
T
min
T
amb
T
max
R
L
= 10 kΩ, V
CC+
= 30 V
T
min
T
amb
T
max
Low level output voltage
R
L
= 10 kΩ
T
min
T
amb
T
max
Slew rate
,
V
CC+
= 15V, V
i
= 0.5 to 3V, R
L
= 2kΩ
C
L
= 100pF, unity Gain
Gain bandwidth product
V
CC+
= 30 V, f = 100 kHz,V
in
= 10 mV,
,
R
L
= 2 kΩ C
L
= 100 pF
Total harmonic distortion
f = 1 kHz, A
v
= 20 dB, R
L
= 2 kΩ, V
o
= 2 V
pp
,
C
L
= 100 pF, V
O
= 2 V
pp
Equivalent input noise voltage
f = 1 kHz, R
s
= 100
Ω,
V
CC+
= 30 V
Channel separation
(4)
1kHz
f
20 kHz
0.3
Min.
Typ.
Max.
Unit
CMR
70
60
20
85
dB
I
source
40
60
mA
I
sink
10
12
26
26
27
27
20
50
27
mA
µA
V
OH
V
28
V
OL
5
20
20
mV
SR
0.6
V/µs
GBP
0.7
1.1
MHz
THD
0.02
%
e
n
V
o1
/V
o2
55
120
nV
-----------
-
Hz
dB
1. V
o
= 1.4 V, R
s
= 0
Ω,
5 V < V
CC+
< 30 V, 0 < V
ic
< V
CC+
- 1.5 V
2. The direction of the input current is out of the IC. This current is essentially constant, independent of the state of the output
so there is no change in the load on the input lines.
3. The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3 V.
The upper end of the common-mode voltage range is V
CC+
- 1.5 V, but either or both inputs can go to +32 V without
damage.
4. Due to the proximity of external components, ensure that stray capacitance between these external parts does not cause
coupling. Typically, this can be detected because this type of capacitance increases at higher frequencies.
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