欢迎访问ic37.com |
会员登录 免费注册
发布采购

L6599AD 参数 Datasheet PDF下载

L6599AD图片预览
型号: L6599AD
PDF下载: 下载PDF文件 查看货源
内容描述: 改进的高压谐振控制器 [Improved high-voltage resonant controller]
分类和应用: 稳压器开关式稳压器或控制器电源电路开关式控制器光电二极管高压
文件页数/大小: 35 页 / 2006 K
品牌: STMICROELECTRONICS [ ST ]
 浏览型号L6599AD的Datasheet PDF文件第24页浏览型号L6599AD的Datasheet PDF文件第25页浏览型号L6599AD的Datasheet PDF文件第26页浏览型号L6599AD的Datasheet PDF文件第27页浏览型号L6599AD的Datasheet PDF文件第29页浏览型号L6599AD的Datasheet PDF文件第30页浏览型号L6599AD的Datasheet PDF文件第31页浏览型号L6599AD的Datasheet PDF文件第32页  
Application information  
L6599A  
If the function is not used, the pin must be connected to a voltage greater than 1.24 V but  
lower than 6 V (worst-case value of the 7 V threshold).  
7.7  
Bootstrap section  
The supply of the floating high-side section is obtained by means of a bootstrap circuitry.  
This solution normally requires a high-voltage fast recovery diode (DBOOT, Figure 31a) to  
charge the bootstrap capacitor CBOOT. In the L6599A a patented integrated structure,  
replaces this external diode. It is realized by means of a high-voltage DMOS, working in the  
third quadrant and driven synchronously with the low-side driver (LVG), with a diode in  
series to the source, as shown in Figure 31b.  
Figure 31. Bootstrap supply: a) standard circuit; b) internal bootstrap synchronous  
diode  
'
%227  
/ꢅꢂꢆꢆ$  
9FFꢁꢁꢁꢂꢃ  
ꢂꢅꢁꢁꢁꢁꢁꢁꢁ9%227  
9FF  
9%227  
&
%227  
&
%227  
/9*  
ꢂꢈꢁꢁꢁꢁꢁꢁ287  
287  
Dꢎ  
Eꢎ  
!-ꢀꢁꢁꢇꢁVꢁ  
The diode prevents any current being able to flow from the VBOOT pin back to Vcc, in case  
the supply is quickly turned off when the internal capacitor of the pump is not fully  
discharged. To drive the synchronous DMOS a voltage higher than the supply voltage Vcc is  
necessary. This voltage is obtained by means of an internal charge pump (Figure 31b).  
The bootstrap structure introduces a voltage drop while recharging CBOOT (i.e. when the  
low-side driver is on), which increases with the operating frequency and with the size of the  
external Power MOSFET. It is the sum of the drop across the R(DS)ON and the forward drop  
across the series diode. At low frequency this drop is very small and can be neglected but,  
as the operating frequency increases, it must be taken into account. In fact, the drop  
reduces the amplitude of the driving signal and can significantly increase the R(DS)ON of the  
external high-side MOSFET and then its conductive loss.  
This concern applies to converters designed with a high resonance frequency (indicatively,  
> 150 kHz), so that they run at high frequency also at full load. Otherwise, the converter runs  
at high frequency at light load, where the current flowing in the MOSFETs of the half bridge  
leg is low, so that, generally, an R(DS)ON rise is not an issue. However, it is wise to check this  
point anyway and the following equation is useful to compute the drop on the bootstrap  
driver:  
28/35  
Doc ID 15308 Rev 7  
 
 复制成功!