L2720W
Electrical specifications
3.4
Electrical characteristics
The electrical specifications in Table 6 below are given for operation under the conditions
V = 24 V, T = -40 °C to 125 °C and RI connected to GND, unless otherwise specified
S
amb
Table 6.
Symbol
Electrical characteristics
Parameter
Conditions
Min
Typ
10
Max
15
Unit
T
amb = 25 °C -
Is
Quiescent current
Input bias current
Input offset current
Input offset voltage
VO = VS / 2
VCM = 0
mA
-
-
10
0.2
0.2
-
18
1
Tamb = 25 °C -
Iib
Iob
µA
nA
mV
-
-
1
Tamb = 25 °C -
100
100
10
10
VCM = 0
-
-
-
T
amb = 25 °C
-10
-10
-
Vos
-
-
-
Average temperature
coefficient of Vos
µV/°
C
∆Vos/∆T
-
-
20
2
-
-
Vin = -10 V to +10 V,
RL = 2 kΩ, CL = 100 pF, Av = -1,
Tamb = 25 °C
SR
Slew rate
V/µs
B
Gain-bandwidth product
Open loop voltage gain
-
-
1.2
80
60
84
70
-
-
-
-
-
MHz
dB
f = 100 Hz
f = 1 kHz
70
-
Gv
CMRR
Common mode rejection ratio f = 1 kHz
66
-
dB
f = 100 Hz
Vs = 24 V
SVRR
Supply voltage rejection ratio
Drop voltage high
RG = 10 kΩ
dB
Vs = 12 V
60
75
-
VR = 0.5 V
Tamb = 25 °C -
0.7
0.8
1.0
1.1
0.3
0.4
0.5
1.3
60
1
Ip = 100 mA
Ip = 1 A
-
-
1.5
1.5
1.5
0.7
1
VDROP(H)
V
Tamb = 25 °C -
-
-
Tamb = 25 °C -
Ip = 100 mA
Ip = 1 A
-
-
VDROP(L)
Drop voltage low
V
Tamb = 25 °C -
1
-
-
-
1.5
-
f = 1 kHz;
RL = 10 Ω;
Gv = 30 dB
Vs = 24 V
Cs
eN
Channel separation
Input noise voltage
dB
Vs = 6 V
-
-
60
10
-
-
B = 22 Hz to 22 kHz,
Tamb = 25 °C
µV
Doc ID 13407 Rev 2
5/12
STMICROELECTRONICS [ ST ]
