IRFP250
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
0.66
30
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
0.1
300
T
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-Repetitive
I
33
A
AR
(pulse width limited by T max)
j
Single Pulse Avalanche Energy
E
AS
600
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
200
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±30V
±100
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V , I = 250 µA
Gate Threshold Voltage
2
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 16A
D
0.073
0.085
Ω
DS(on)
GS
I
On State Drain Current
V
V
> I
= 10V
x R
DS(on)max,
33
A
D(on)
DS
D(on)
GS
DYNAMIC
Symbol
Parameter
Test Conditions
x R
DS(on)max,
Min.
Typ.
Max.
Unit
g
fs
Forward Transconductance
V
DS
> I
10
25
S
D(on)
I
D
= 16A
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
2850
420
pF
pF
iss
C
oss
Reverse Transfer
Capacitance
C
rss
120
pF
2/8
STMICROELECTRONICS [ ST ]
