IRF740
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbo l
t
d(on)
t
r
Q
g
Q
gs
Q
gd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Con ditions
V
DD
= 200 V I
D
= 5 A
V
GS
= 10 V
R
G
= 4.7
Ω
(see test circuit, figure 3)
V
DD
= 320 V
I
D
= 10.7 A V
GS
= 10V
Min.
T yp.
17
10
35
11
12
43
Max.
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t
r (Voff)
t
f
t
c
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
V
DD
= 320 V I
D
= 10 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see test circuit, figure 5)
Min.
T yp.
10
10
17
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
I
SD
I
SDM
(•)
V
SD
(∗)
t
rr
Q
rr
I
RRM
Parameter
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
= 10 A
V
GS
= 0
370
3.2
17
I
SD
=10 A di/dt = 100 A/
µ
s
T
j
= 150
o
C
V
DD
= 100 V
(see test circuit, figure 5)
Test Con ditions
Min.
T yp.
Max.
10
40
1.6
Unit
A
A
V
ns
µ
C
A
(∗) Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
