IRF740
THERMAL DATA
R
thj -case
Rthj -amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.0
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbo l
I
AR
E
AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
o
(starting T
j
= 25 C, I
D
= I
AR
, V
DD
= 50 V)
Max Valu e
10
520
Unit
A
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbo l
V
(BR)DSS
I
DSS
I
GSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I
D
= 250
µA
V
GS
= 0
Min.
400
1
50
±
100
T yp.
Max.
Unit
V
µA
µ
A
nA
V
DS
= Max Rating
Zero G ate Voltage
Drain Current (V
GS
= 0) V
DS
= Max Rating
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
T
c
= 125 C
o
ON (
∗)
Symbo l
V
GS(th)
R
DS(on)
I
D(o n)
Parameter
Gate Threshold
Voltage
V
DS
= V
GS
Test Con ditions
I
D
= 250
µA
I
D
= 5.3 A
10
Min.
2
T yp.
3
0.48
Max.
4
0.55
Unit
V
Ω
A
Static Drain-source O n V
GS
= 10V
Resistance
On State Drain Current V
DS
> I
D(o n)
x R
DS(on )ma x
V
GS
= 10 V
DYNAMIC
Symbo l
g
f s
(∗)
C
iss
C
os s
C
rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
Test Con ditions
V
DS
> I
D(o n)
x R
DS(on )ma x
V
DS
= 25 V
f = 1 MHz
I
D
= 6 A
V
GS
= 0
Min.
5.8
1400
220
27
T yp.
Max.
Unit
S
pF
pF
pF
2/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
