IRF640S
THERMAL DATA
3.12
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthc-sink Thermal Resistance Case-sink
Max
Max
Typ
1.0
62.5
0.5
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
18
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 C, ID = IAR, VDD = 50 V)
280
mJ
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwisespecified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
200
V
IDSS
IGSS
VDS = Max Rating
1
10
µA
A
µ
o
Tc = 125 C
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
± 100
nA
ON ( )
Symbol
VGS(th)
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
Gate Threshold Voltage VDS = VGS ID = 250
A
2
µ
RDS(on)
Static Drain-source On VGS = 10V ID = 9 A
Resistance
0.15
0.18
Ω
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
18
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
VDS > ID(on) x RDS(on)max ID = 9 A
Min.
Typ.
Max.
Unit
gfs ( )
3
4
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz VGS = 0
1200
200
60
1560
260
80
pF
pF
pF
2/8
STMICROELECTRONICS [ ST ]
