®
IRF640S
N - CHANNEL 200V - 0.150Ω - 18A TO-263
MESH OVERLAY™ MOSFET
TYPE
IRF640S
s
s
s
s
V
DSS
200 V
R
DS(on)
< 0.18
Ω
I
D
18 A
TYPICAL R
DS(on)
= 0.150
Ω
EXTREMELY HIGH dv/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
DESCRIPTION
This power MOSFET is designed using he
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
D
2
PAK
TO-263
(suffix ”T4”)
APPLICATIONS
s
HIGH CURRENT SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
•
)
P
tot
dv/dt(
1
)
T
s tg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
200
200
±
20
18
11
72
125
1.0
5
-65 to 150
150
(
1
) I
SD
≤
18A, di/dt
≤
300 A/µs, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
Un it
V
V
V
A
A
A
W
W /
o
C
V/ns
o
o
C
C
(•) Pulse width limited by safe operating area
September 1999
1/8
STMICROELECTRONICS [ STMICROELECTRONICS ]
