DMV1500M
Fig. 7-2: Reverse recovery current versus dIF/dt
(modulation diode).
Fig. 8-1: Transient peak forward voltage versus
dIF/dt (damper diode).
IRM(A)
VFP(V)
6
40
IF= 3A
90% confidence
Tj=125°C
IF= 6A
90% confidence
Tj=125°C
35
5
30
4
3
2
1
25
20
15
10
5
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
20
40
60
80
100
120
140
1
10
100
200
Fig. 8-2: Transient peak forward voltage versus
dIF/dt (modulation diode).
Fig. 9-1: Forward recovery time versus dIF/dt
(damper diode).
VFP(V)
tfr(ns)
12
11
10
800
IF= 3A
90% confidence
Tj=125°C
IF= 6A
90% confidence
Tj=125°C
VFR=3V
750
9
8
7
6
5
4
3
2
700
650
600
550
500
450
dIF/dt(A/µs)
1
dIF/dt(A/µs)
0
400
0
20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
Fig. 9-2: Forward recovery time versus dIF/dt
(modulation diode).
Fig. 10: Dynamic parameters versus junction tem-
perature (damper & modulation diodes).
tfr(ns)
VFP,IRM,Qrr[Tj]/VFP,IRM,Qrr[Tj=125°C]
200
1.2
IF=IF(av)
90% confidence
Tj=125°C
Vfr=2V
175
1.0
0.8
150
125
100
75
VFP
0.6
IRM
0.4
50
Qrr
0.2
25
dIF/dt(A/µs)
Tj(°C)
0
0.0
0
20 40 60 80 100 120 140 160 180 200
0
20
40
60
80
100
120
140
6/9
®
STMICROELECTRONICS [ ST ]
