DMV1500M
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
IM(A)
K=[Zth(j-c)/Rth(j-c)]
40
1.0
35
30
25
20
δ = 0.5
0.5
δ = 0.2
δ = 0.1
15
Tc=100°C
0.2
T
10
Single pulse
IM
tp(s)
5
t
t(s)
tp
=tp/T
δ
δ=0.5
0.1
1E-3
0
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
Fig. 6-1: Reverse recovery charges versus dIF/dt
(damper diode).
IM(A)
Qrr(nc)
30
1000
IF= 6A
900
800
90% confidence
Tj=125°C
25
20
15
700
600
500
400
300
200
Tc=100°C
10
IM
5
t
t(s)
δ=0.5
100
0
dIF/dt(A/µs)
0.5 1.0
0
1E-3
1E-2
1E-1
1E+0
0.1
0.2
2.0
5.0
Fig. 7-1: Reverse recovery current versus dIF/dt
(damper diode).
Fig. 6-2: Reverse recovery charges versus dIF/dt
(modulation diode).
IRM(A)
Qrr(nC)
2.0
1.8
1.6
200
IF= 6A
90% confidence
Tj=125°C
IF= 3A
90% confidence
Tj=125°C
150
100
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0.0
0.1
1.0
10.0
100.0
0.1
0.2
0.5
1.0
2.0
5.0
5/9
®
STMICROELECTRONICS [ ST ]
