DMV1500M
Figure 11: Peak reverse recovery current
versus dI /dt (modulation diode)
Figure 12: Transient peak forward voltage
versus dI /dt (damper diode)
F
F
I
(A)
V
(V)
RM
FP
6.0
5.0
4.0
3.0
2.0
1.0
0.0
40
35
30
25
20
15
10
5
IF=IP
Tj=125°C
90% confidence
IF=IP
Tj=125°C
90% confidence
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0
20
40
60
80
100
120
140
1
10
100
1000
Figure 13: Transient peak forward voltage
versus dI /dt (modulation diode)
Figure 14: Forward recovery time versus dI /dt
(damper diode)
F
F
t (ns)
fr
V
(V)
FP
800
12
11
10
9
IF=IP
Tj=125°C
VFR=3V
90% confidence
IF=IP
Tj=125°C
90% confidence
750
700
650
600
550
500
450
400
8
7
6
5
4
3
2
1
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
Figure 15: Forward recovery time versus dI /dt
(modulation diode)
Figure 16: Relative variation of dynamic
parameters versus junction temperature
F
I
, V , Q
[T ]/ I , V , Q
[T =125°C]
RR j
t (ns)
fr
RM FP
RR
j
RM FP
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
175
IF=IP
Tj=125°C
VFR=2V
90% confidence
150
125
100
75
VFP
IRM
QRR
50
25
T (°C)
j
dI /dt(A/µs)
F
0
0
20
40
60
80
100
120
140
160
180
200
25
50
75
100
125
5/8
STMICROELECTRONICS [ ST ]
