DMV1500M
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration
Figure 6: Non repetitive peak forward current
versus overload duration (damper diode)
Z
/R
I
(A)
th(j-c) th(j-c)
M
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
35
30
25
20
15
10
5
DAMPER diode
MODULATION diode
TC=25°C
TC=75°C
IM
TC=125°C
t
t(s)
δ=0.5
t (s)
p
Single pulse
0
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
Figure 7: Non repetitive peak forward current
versus overload duration (modulation diode)
Figure 8: Reverse recovery charges versus
dI /dt (damper diode)
F
I
M
(A)
Q (nC)
rr
30
25
20
15
10
5
1000
IF=IP
Tj=125°C
900
90% confidence
800
700
600
500
400
300
200
100
TC=25°C
TC=75°C
TC=125°C
IM
t
t(s)
δ
=0.5
dI /dt(A/µs)
F
0
0
0.1
1.0
10.0
1.E-03
1.E-02
1.E-01
1.E+00
Figure 9: Reverse recovery charges versus
Figure 10: Peak reverse recovery current
versus dI /dt (damper diode)
dI /dt (modulation diode)
F
F
Q (nC)
rr
I
(A)
RM
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IF=IP
IF=IP
Tj=125°C
90% confidence
Tj=125°C
90% confidence
150
100
50
dI /dt(A/µs)
F
dI /dt(A/µs)
F
0
0.1
1.0
10.0
0.1
1.0
10.0
100.0
4/8
STMICROELECTRONICS [ ST ]
