BTA/BTB16 and T16 Series
Fig. 4:
values)
ITM (A)
200
On-state
characteristics
(maximum
Fig. 5:
Surge peak on-state current versus
number of cycles.
ITSM (A)
Tj max
100
10
Tj=25°C
VTM (V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Tj max:
Vto = 0.85 V
Rd = 25 mΩ
4.0
4.5
5.0
180
160
140
120
100
80
60
40
20
0
t=20ms
Non repetitive
Tj initial=25°C
One cycle
Repetitive
Tc=85°C
Number of cycles
1
10
100
1000
Fig. 6:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
3000
Tj initial=25°C
dI/dt limitation:
50A/µs
Fig. 7:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
IGT
1000
1.5
IH & IL
ITSM
1.0
0.5
I²t
tp (ms)
100
0.01
0.10
1.00
10.00
Tj(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Fig. 8:
Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
B
C
SW
Fig. 9:
Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
BW/CW/T1635
3
2
1
0
0
25
50
Tj (°C)
75
100
125
5/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
