BTA/BTB16 and T16 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
s
SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol
Test Conditions
Quadrant
T16
T1635
I
GT
(1)
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= 12 V
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
MIN.
(dV/dt)c = 10 V/µs
Without snubber
I - III
II
MIN.
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs
R
L
= 33
Ω
R
L
= 3.3 kΩ
Tj = 125°C
I - II - III
I - II - III
I - II - III
MAX.
MAX.
MIN.
MAX.
MAX.
35
50
60
500
-
-
8.5
15
25
30
40
8.5
3.0
-
35
SW
10
1.3
0.2
35
50
60
500
-
-
8.5
50
70
80
1000
-
-
14
V/µs
A/ms
BTA/BTB16
CW
35
BW
50
mA
V
V
mA
mA
Unit
s
STANDARD (4 Quadrants)
Symbol
Test Conditions
Quadrant
BTA/BTB16
C
I
GT
(1)
V
D
= 12 V
V
GT
V
GD
I
H
(2)
I
L
dV/dt (2)
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67 % V
DRM
gate open Tj = 125°C
Tj = 125°C
I - III - IV
II
MIN.
MIN.
R
L
= 3.3 kΩ
Tj = 125°C
R
L
= 33
Ω
I - II - III
IV
ALL
ALL
MAX.
MAX.
MIN.
MAX.
MAX.
25
40
80
200
5
25
50
1.3
0.2
50
60
120
400
10
V/µs
V/µs
B
50
100
mA
V
V
mA
mA
Unit
(dV/dt)c (2) (dI/dt)c = 7 A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
(2)
V
to
(2)
R
d
(2)
I
DRM
I
RRM
Note 1:
minimum IGT is guaranted at 5% of IGT max.
Note 2:
for both polarities of A2 referenced to A1
Test Conditions
I
TM
= 22.5 A
tp = 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
MAX.
Value
1.55
0.85
25
5
2
Unit
V
V
mΩ
µA
mA
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
2/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
