BD533/BD534/BD535/BD536/BD537/BD538
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2.5
70
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
for
BD533/534
for
BD535/536
for
BD537/538
for
BD533/534
for
BD535/536
for
BD537/538
V
EB
= 5 V
I
C
= 100 mA
for
BD533/534
for
BD535/536
for
BD537/538
I
B
= 0.2 A
I
B
= 0.6 A
V
CE
= 2 V
V
CE
= 5 V
for
BD533/534
for
BD535/536
for
BD537/538
V
CE
= 2 V
V
CE
= 2 V
for
BD533/534
for
BD535/536
for
BD537/538
V
CE
= 1 V
20
20
15
40
25
25
15
3
12
MHz
45
60
80
0.8
0.8
1.5
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
V
CE
= 45 V
V
CE
= 60 V
V
CE = 80 V
Min.
Typ .
Max.
100
100
100
100
100
100
1
Un it
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
I
CES
I
EBO
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat )
∗
V
BE
∗
h
FE
∗
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current G ain
I
C
= 2 A
I
C
= 6 A
I
C
= 2 A
I
C
= 10 mA
I
C
= 500 mA
I
C
= 2 A
f
T
Transition frequency
I
C
= 500 mA
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Areas
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
