BD533/5/7
BD534/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
s
BD534, BD535, BD536, BD537 AND BD538
ARE SGS-THOMSON PREFERRED
SALESTYPES
DESCRIPTION
The BD533, BD535, and BD537 are silicon
epitaxial-base NPN power transistors in Jedec
TO-220 plastic package, intented for use in
medium power linear and switching applications.
The complementary PNP types are BD534,
BD536, and BD538 respectively.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CES
V
CEO
V
EBO
I
C,
I
E
I
B
P
t ot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector and Emitter Current
Base Current
Total Dissipation at T
c
≤
25 C
o
Value
BD533
BD534
45
45
45
BD535
BD536
60
60
60
5
8
1
50
-65 to 150
150
BD537
BD538
80
80
80
Uni t
V
V
V
V
A
A
W
o
o
Storage Temperature
Max. O perating Junction Temperature
C
C
For PNP types voltage and current values are negative.
June 1997
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