BCP52/53
THERMAL DATA
R
thj-amb
•
R
thj-tab
•
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Collecor Tab
Max
Max
62.5
8
o
o
C/W
C/W
•
Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= -30 V
V
CB
= -30 V
I
C
= -100
µA
for
BCP52
for
BCP53
I
C
= -20 mA
for
BCP52
for
BCP53
I
C
= -100
µA
for
BCP52
for
BCP53
I
C
= -10
µA
T
j
= 125 C
-60
-100
-60
-80
-60
-100
-5
o
Min.
Typ.
Max.
-100
-10
Unit
nA
µA
V
V
V
V
V
V
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)CER
Collector-Emitter
Breakdown Voltage
(R
BE
= 1 KΩ)
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
V
(BR)EBO
V
CE(sat)
∗
V
BE(on)
∗
h
FE
∗
I
C
= -500 mA
I
C
= -500 mA
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
-5 mA
-150 mA
-150 mA
-150 mA
-500 mA
I
B
= -50 mA
V
CE
= -2 V
V
CE
=
V
CE
=
V
CE
=
V
CE
=
V
CE
=
-2 V
-2 V for Gr. 6
-2 V for Gr. 10
-2 V for Gr. 16
-2 V
f = 35 MHz
25
40
63
100
25
50
-0.5
-1
V
V
100
160
250
MHz
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -5 V
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1.5 %
2/4
STMICROELECTRONICS [ STMICROELECTRONICS ]
