BCP52/53
MEDIUM POWER AMPLIFIER
ADVANCE DATA
s
s
s
s
SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
NPN COMPLEMENTS ARE BCP55 AND
BCP56 RESPECTIVELY
2
1
SOT-223
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
CER
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
BCP52
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector-Emitter Voltage (R
BE
= 1KΩ)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< ms)
Total Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction Temperature
o
Value
BCP53
-100
-80
-100
-5
-1
-1.5
-0.1
-0.2
2
-65 to 150
150
-60
-60
-60
Unit
V
V
V
V
A
A
A
A
W
o
o
C
C
1/4
October 1997
STMICROELECTRONICS [ STMICROELECTRONICS ]
