BAT54J / W / AW / CW / SW
Fig. 2:
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+2
Tj=100°C
Fig. 3:
Reverse leakage current versus junction
temperature.
IR(µA)
1E+4
VR=30V
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
1E+1
1E+0
Tj=25°C
Tj=50°C
1E-1
VR(V)
0
5
10
15
20
25
30
1E-2
Tj(°C)
0
25
50
75
100
125
150
Fig. 4:
Junction capacitance versus reverse
voltage applied (typical values).
Fig. 5:
Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4 with recommended pad layout, e(Cu)=35µm)
C(pF)
10
F=1MHz
Tj=25°C
Zth(j-a)/Rth(j-a)
1.00
δ
= 0.5
5
δ
= 0.2
0.10
δ
= 0.1
2
Single pulse
T
VR(V)
1
1
2
5
10
20
30
tp(s)
0.01
1E-3
1E-2
1E-1
1E+0
δ
=tp/T
tp
1E+1
1E+2
Fig. 6:
Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printedcircuit board FR4, copper thickness: 35µm.)
Rth(j-a) (°C/W)
600
550
500
450
400
350
S(Cu) (mm )
300
0
5
10
15
20
25
30
35
40
45
50
P=0.2W
3/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
