BAT54J / W / AW / CW / SW
THERMAL RESISTANCE
Symbol
R
th (j-a)
Junction to ambient (*)
Parameters
SOD-323
SOT-323
(*) Mounted on epoxy board, with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
Symbol
V
F
*
Parameters
Forward voltage drop
Tests conditions
Tj = 25
°
C
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
**
Reverse leakage current
Tj = 25
°
C
Tj = 100°C
Pulse test :
* tp = 380
µs, δ
< 2%
** tp = 5 ms,
δ
< 2%
Value
550
Unit
°C/W
°
C/W
Min.
Typ.
Max.
240
320
400
500
900
1
100
Unit
mV
V
R
= 30 V
µ
A
DYNAMIC CHARACTERISTICS
(Tj = 25
°C)
Symbol
C
t
rr
Parameters
Junction
capacitance
Reverse recovery
time
Tests conditions
Tj = 25
°
C
V
R
= 1 V
F = 1 MHz
Min.
Typ.
Max.
10
5
Unit
pF
ns
I
F
= 10 mA I
R
= 10 mA Tj = 25°C
I
rr
= 1 mA R
L
= 100
Ω
Fig. 1-1:
Forward voltage drop versus forward
current (typical values, low level).
IFM(A)
2.00E-2
1.80E-2
Tj=100°C
1.60E-2
1.40E-2
Tj=25°C
1.20E-2
Tj=50°C
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
VFM(V)
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Fig. 1-2:
Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
5E-1
Tj=100°C
1E-1
Tj=50°C
1E-2
Tj=25°C
VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
2/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
