2N2219A / 2N2222A
THERMAL DATA
TO-39
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
50
187.5
TO-18
83.3
300
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
CEX
I
BEX
I
EBO
V
(BR)CBO
Parameter
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= -3V)
Base Cut-off Current
(V
BE
= -3V)
Emitter Cut-off Current
(I
C
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
Test Conditions
V
CB
= 60 V
V
CB
= 60 V
V
CE
= 60 V
V
CE
= 60 V
V
EB
= 3 V
I
C
= 10
µA
75
T
j
= 150 C
o
Min.
Typ.
Max.
10
10
10
20
10
Unit
nA
µA
nA
nA
nA
V
V
(BR)CEO
∗
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
C
= 10 mA
40
V
I
E
= 10
µA
6
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 500 mA
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
= 50 mA
0.6
35
50
75
100
40
50
35
f = 1KHz
f = 1KHz
50
75
300
0.3
1
1.2
2
V
V
V
V
I
C
= 0.1 mA
V
CE
= 10 V
I
C
= 1 mA
V
CE
= 10 V
I
C
= 10 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 10 V
I
C
= 500 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 1 V
I
C
= 10 mA
V
CE
= 10 V
T
amb
= -55
o
C
I
C
= 1 mA
I
C
= 10 mA
I
C
= 20 mA
f = 100 MHz
I
C
= 0
I
E
= 0
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 20 V
f = 100KHz
f = 100 KHz
300
h
fe
∗
f
T
C
EBO
C
CBO
R
e(hie)
Small Signal Current
Gain
Transition Frequency
Emitter-Base
Capacitance
Collector-Base
Capacitance
Real Part of Input
Impedance
300
375
MHz
25
8
60
pF
pF
Ω
V
EB
= 0.5 V
V
CB
= 10 V
I
C
= 20 mA
f = 300MHz
V
CE
= 20 V
* Pulsed: Pulse duration = 300
µs,
duty cycle
≤
1 %
2/7
STMICROELECTRONICS [ STMICROELECTRONICS ]
