®
2N2219A
2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
metal case. They are designed for high speed
switching application at collector current up to
500mA, and feature useful current gain over a
wide range of collector current, low leakage
currents and low saturation voltage.
TO-18
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Total Dissipation at T
amb
≤
25
o
C
for
2N2219A
for
2N2222A
at T
C
≤
25
o
C
for
2N2219A
for
2N2222A
Storage Temperature
Max. Operating Junction Temperature
Value
75
40
6
0.6
0.8
0.8
0.5
3
1.8
-65 to 175
175
Unit
V
V
V
A
A
W
W
W
W
o
o
T
stg
T
j
C
C
1/7
February 2003
STMICROELECTRONICS [ STMICROELECTRONICS ]
