1N5908/SM5908
ELECTRICALCHARACTERISTICS(Tamb = 25°C)
I
Symbol
VRM
VBR
Parameter
Stand-offvoltage
IF
Breakdown voltage
Clamping voltage
VBR
VCL
VF
VRM
VCL
V
IRM
IRM
Leakagecurrent @ VRM
Peakpulse current
IPP
α
T
Voltage temperaturecoefficient
Forward voltage
IPP
VF
IRM @ VRM
VBR @ IR
min
VCL @ IPP
max
VCL @ IPP
max
VCL @ IPP
max
αT
C
max
max
typ
Types
note2
10/1000µs
10/1000µs
10/1000µs
note3 note4
µA
V
V
mA
V
A
V
A
V
A
10-4/°C
pF
1N5908
SM5908
300
5
6
1
7.6
30
8
60
8.5
120
5.7
9500
Fig. 1: Peak pulse power dissipation versus
initial junction temperature (printed circuit board).
% IPP
100
µs
10
50
0
t
s
µ
1000
Note 2 : Pulse test : tp < 50ms
Note 3 : ∆VBR = αT*(Tamb-25)* VBR (25°C).
Note 4 :
VR = 0V, F = 1 MHz
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STMICROELECTRONICS [ ST ]
