1N5908
SM5908
TRANSILTM
FEATURES
UNIDIRECTIONAL TRANSIL DIODE
PEAK PULSE POWER : 1500 W (10/1000µs)
REVERSESTAND OFF VOLTAGE: 5 V
LOW CLAMPINGFACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
The 1N5908 and SM5908 are dedicatedto the 5 V
logiccircuitprotection(TTL andCMOStechnologies).
Their low clamping voltage at high current level
guarantees excellent protection for sensitive
components.
CB429
SMC
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C).
Symbol
PPP
Parameter
Peakpulse power dissipation (see note1)
Power dissipationon infinite heatsink
Value
Unit
W
Tj initial = Tamb
1500
5
P
Tamb = 75°C
W
IFSM
Non repetitive surge peak forward current
for unidirectionaltypes
tp = 10ms
Tj initial= Tamb
200
A
Tstg
Tj
Storage temperaturerange
Maximum junction temperature
- 65 to + 175
175
°C
°C
TL
Maximum lead temperaturefor soldering
during10s (at 5mm from case for CB429)
CB429
SMC
230
260
°C
°C
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
Rth (j-l)
Parameter
Value
20
Unit
°C/W
°C/W
°C/W
Junction to leads
Rth (j-a)
Junction to ambient
on printed circuit.
CB429
SMC
75
L lead = 10 mm
75
On recommended pad layout
August 1999 Ed : 2A
1/6
STMICROELECTRONICS [ ST ]
