1N581x
Fig. 8-1:
Reverse leakage current versus reverse
voltage applied (typical values) (1N5817/1N5818).
IR(mA)
Tj=125°C
1N5818
1N5817
Fig. 8-2:
Reverse leakage current versus reverse
voltage applied (typical values) (1N5819).
IR(mA)
Tj=125°C
1E+1
1E+1
1E+0
Tj=100°C
1E+0
Tj=100°C
1E-1
1E-1
1E-2
Tj=25°C
1E-2
Tj=25°C
VR(V)
1E-3
0
5
10
15
20
25
30
1E-3
0
5
10
15
VR(V)
20
30
35
40
Fig. 9-1:
Forward voltage drop versus forward
current (typical values) (1N5817/1N5818).
IFM(A)
Fig. 9-2:
Forward voltage drop versus forward
current (typical values) (1N5819).
IFM(A)
10.00
10.00
1.00
Tj=100°C
Tj=125°C
1.00
Tj=100°C
Tj=125°C
0.10
Tj=25°C
0.10
Tj=25°C
0.01
0.0
VFM(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VFM(V)
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Fig. 10:
Non repetitive surge peak forward current
versus number of cycles.
IFSM(A)
F=50Hz
Tj initial=25°C
30
25
20
15
10
5
Number of cycles
0
1
10
100
1000
4/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
