1N581x
THERMAL RESISTANCES
Symbol
R
th (j-a)
R
th (j-l)
Junction to ambient
Junction to lead
Parameter
Lead length = 10 mm
Lead length = 10 mm
Value
100
45
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
V
F
*
Parameter
Reverse leakage
current
Forward voltage drop
Tests Conditions
Tj = 25°C
Tj = 100°C
Tj = 25°C
Tj = 25°C
Pulse test : * tp = 380
µs, δ
< 2%
V
R
= V
RRM
I
F
= 1 A
I
F
= 3 A
1N5817 1N5818 1N5819
0.5
0.5
0.5
10
0.45
0.75
10
0.50
0.80
10
0.55
0.85
Unit
mA
mA
V
V
To evaluate the conduction losses use the following equations :
P = 0.3 x I
F(AV)
+ 0.090 I
F2(RMS )
for 1N5817 / 1N5818
P = 0.3 x I
F(AV)
+ 0.150 I
F2(RMS )
for 1N5819
Fig. 1:
Average forward power dissipation versus
average forward current (1N5817/1N5818).
PF(av)(W)
0.6
0.5
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 2:
Average forward power dissipation versus
average forward current (1N5819).
PF(av)(W)
0.7
0.6
0.5
δ
= 0.1
δ
= 0.05
δ
=1
δ
= 0.2
δ
= 0.5
0.4
0.3
δ
=1
0.4
0.3
0.2
T
0.2
0.1
tp
T
0.1
IF(av) (A)
δ
=tp/T
IF(av) (A)
δ
=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig. 2-1:
Average forward current versus ambient
temperature (δ=0.5) (1N5817/1N5818).
IF(av)(A)
1.2
Rth(j-a)=Rth(j-l)=45°C/W
Fig. 2-2:
Average forward current versus ambient
temperature (δ=0.5) (1N5819).
IF(av)(A)
Rth(j-a)=Rth(j-l)=45°C/W
1.2
1.0
Rth(j-a)=100°C/W
1.0
0.8
0.6
0.4
T
0.8
0.6
0.4
T
Rth(j-a)=100°C/W
0.2
δ
=tp/T
tp
0.2
Tamb(°C)
50
75
100
125
150
δ
=tp/T
tp
Tamb(°C)
50
75
100
125
150
0.0
0
25
0.0
0
25
2/5
STMICROELECTRONICS [ STMICROELECTRONICS ]
