STP3481
P Channel Enhancement Mode MOSFET
-5.2A
※ STP3481S6RG
S6 : TSOP-6P ; R : Tape Reel ; G : Pb – Free
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
ID
Typical
Unit
V
-30
±
20
V
TA=25℃
-5.2
-4.2
℃
Continuous Drain CurrentTJ=150 )
A
℃
TA=70
Pulsed Drain Current
IDM
-20
A
Continuous Source Current (Diode Conduction)
IS
-1.7
A
TA=25℃
2.0
1.3
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
90
TSTG
℃
/W
Rθ
Thermal Resistance-Junction to Ambient
JA
2
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
STP3481 2006. V1
STANSON [ STANSON TECHNOLOGY ]
